El-Banna Introduction General Frequency Considerations Low Frequency Analysis- Bode Plot BJT & JFET Amplifiers Low Frequency Analysis Miller Effect BJT & JFET Amplifiers High Frequency Response
the frequency effects introduced by the larger capacitive elements of the network at low frequencies and the smaller capacitive elements of the active device at high frequencies J-601-1448 , Lec#7 , Nov 2014
• The larger capacitors of a system will have an important impact on the response of a system in the low-frequency range and can be ignored for the high-frequency region. • The smaller capacitors of a system will have an important impact on the response of a system in the high-frequency range and can be ignored for the low-frequency region. • The effect of the capacitive elements in an amplifier are ignored for the mid-frequency range when important quantities such as the gain and impedance levels are determined. J-601-1448 , Lec#7 , Nov 2014
In the low-frequency region of the single-stage BJT or FET amplifier, it is the RC combinations formed by the network capacitors CC , CE , and Cs and the network resistive parameters that determine the cutoff frequencies • Voltage-Divider Bias Config. J-601-1448 , Lec#7 , Nov 2014
plot of the asymptotes and associated breakpoints is called a Bode plot of the magnitude versus frequency. • A change in frequency by a factor of two, equivalent to one octave, results in a 6-dB change in the ratio, as shown by the change in gain from fL /2 to fL . • For a 10:1 change in frequency, equivalent to one decade, there is a 20-dB change in the ratio, as demonstrated between the frequencies of fL /10 and fL . • Phase Angle: J-601-1448 , Lec#7 , Nov 2014
voltage-divider ct. the capacitors Cs, CC , and CE will determine the low-frequency response. Cc: CE : fL = max(fLs , fLc , fLE ) J-601-1448 , Lec#7 , Nov 2014
high-frequency region, the capacitive elements of importance are the interelectrode (between-terminals) capacitances internal to the active device and the wiring capacitance between leads of the network. • For any inverting amplifier, the input capacitance will be increased by a Miller effect capacitance sensitive to the gain of the amplifier and the interelectrode (parasitic) capacitance between the input and output terminals of the active device. J-601-1448 , Lec#7 , Nov 2014
value for Av would result in a negative capacitance (for Av > 1). • For noninverting amplifiers such as the common-base and emitter-follower configurations, the Miller effect capacitance is not a contributing concern for high-frequency applications. • The Miller effect will also increase the level of output capacitance, which must also be considered when the high-frequency cutoff is determined. J-601-1448 , Lec#7 , Nov 2014
high-frequency end, there are two factors that define the 3-dB cutoff point: 1. the network capacitance (parasitic and introduced) 2. the frequency dependence of hfe (β). • For RC circuit: J-601-1448 , Lec#7 , Nov 2014
high frequencies, the various parasitic capacitances (Cbe , Cbc , Cce ) of the transistor are included with the wiring capacitances (CWi , CWo ). J-601-1448 , Lec#7 , Nov 2014
• The quantity, fβ , is determined by a set of parameters employed in the hybrid π model • The variation of hfe (or β) with frequency approaches the following relationship: • fβ is a function of the bias configuration. • the small change in hfb for the chosen frequency range, revealing that the common-base configuration displays improved high-frequency characteristics over the common-emitter configuration. J-601-1448 , Lec#7 , Nov 2014
Figure of Merit applied to amplifiers called the Gain-Bandwidth Product (GBP) that is commonly used to initiate the design process of an amplifier. • It provides important information about the relationship between the gain of the amplifier and the expected operating frequency range. • at any level of gain the product of the two remains a constant. • the frequency fT is called the unity-gain frequency and is always equal to the product of the midband gain of an amplifier and the bandwidth at any level of gain. J-601-1448 , Lec#7 , Nov 2014
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